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SI4936DY from SILCO

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SI4936DY

Manufacturer: SILCO

Dual N-Channel Enhancement Mode MOSFET

Partnumber Manufacturer Quantity Availability
SI4936DY SILCO 639 In Stock

Description and Introduction

Dual N-Channel Enhancement Mode MOSFET The SI4936DY is a dual N-channel and P-channel MOSFET manufactured by Vishay Siliconix (formerly SILCO).  

### **Specifications:**  
- **Configuration:** Dual N-Channel and P-Channel  
- **Drain-Source Voltage (VDS):**  
  - N-Channel: 30V  
  - P-Channel: -30V  
- **Continuous Drain Current (ID):**  
  - N-Channel: 5.3A  
  - P-Channel: -4.3A  
- **On-Resistance (RDS(on)):**  
  - N-Channel: 28mΩ (at VGS = 10V)  
  - P-Channel: 55mΩ (at VGS = -10V)  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 2W  
- **Package:** SO-8  

### **Descriptions and Features:**  
- Designed for high-efficiency power management in portable and battery-operated applications.  
- Low on-resistance for reduced conduction losses.  
- Fast switching performance for improved efficiency.  
- Suitable for load switching, power management, and DC-DC conversion.  
- Lead-free and RoHS compliant.  

This information is based on Vishay Siliconix datasheets and product documentation.

Application Scenarios & Design Considerations

Dual N-Channel Enhancement Mode MOSFET

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