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STP80NF12 from ST,ST Microelectronics

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STP80NF12

Manufacturer: ST

N-CHANNEL 120V-0.013OHM-80A TO-220/TO-247/TO-220FP/D2PAK STRIPFET II POWER MOSFET

Partnumber Manufacturer Quantity Availability
STP80NF12 ST 1355 In Stock

Description and Introduction

N-CHANNEL 120V-0.013OHM-80A TO-220/TO-247/TO-220FP/D2PAK STRIPFET II POWER MOSFET The STP80NF12 is an N-channel Power MOSFET manufactured by STMicroelectronics. Here are its key specifications, descriptions, and features:

### **Specifications:**
- **Drain-Source Voltage (VDS):** 120V  
- **Continuous Drain Current (ID):** 80A  
- **Pulsed Drain Current (IDM):** 320A  
- **Power Dissipation (PD):** 300W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.012Ω (max) at VGS = 10V  
- **Total Gate Charge (Qg):** 120nC (typical)  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Operating Junction Temperature (TJ):** -55°C to 175°C  

### **Descriptions:**
- The STP80NF12 is designed for high-power switching applications.  
- It features low on-resistance and high current capability, making it suitable for power management in motor control, power supplies, and DC-DC converters.  
- The device is housed in a TO-220 package for efficient heat dissipation.  

### **Features:**
- **Low RDS(on)** for reduced conduction losses.  
- **Fast switching speed** for improved efficiency.  
- **Avalanche ruggedness** for enhanced reliability.  
- **100% avalanche tested** to ensure robustness.  
- **Logic-level compatible gate drive** (with sufficient VGS).  

This MOSFET is optimized for high-performance power applications requiring efficient thermal management and low power losses.

Application Scenarios & Design Considerations

N-CHANNEL 120V-0.013OHM-80A TO-220/TO-247/TO-220FP/D2PAK STRIPFET II POWER MOSFET

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