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STP10NB50FP from ST,ST Microelectronics

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STP10NB50FP

Manufacturer: ST

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Partnumber Manufacturer Quantity Availability
STP10NB50FP ST 48 In Stock

Description and Introduction

N The STP10NB50FP is a power MOSFET manufactured by STMicroelectronics. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
STMicroelectronics  

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 500V  
- **Continuous Drain Current (ID):** 10A  
- **Pulsed Drain Current (IDM):** 40A  
- **Power Dissipation (PD):** 150W  
- **Gate-Source Voltage (VGS):** ±30V  
- **On-Resistance (RDS(on)):** 0.65Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 3V (min), 5V (max)  
- **Input Capacitance (Ciss):** 1000pF (typ)  
- **Output Capacitance (Coss):** 200pF (typ)  
- **Reverse Transfer Capacitance (Crss):** 50pF (typ)  
- **Turn-On Delay Time (td(on)):** 10ns (typ)  
- **Turn-Off Delay Time (td(off)):** 45ns (typ)  
- **Operating Temperature Range:** -55°C to 150°C  

### **Description:**  
The STP10NB50FP is an N-channel power MOSFET designed for high-voltage, high-speed switching applications. It features low on-resistance, fast switching performance, and high ruggedness, making it suitable for power supplies, motor control, and other high-efficiency applications.  

### **Features:**  
- **High Voltage Capability (500V)**  
- **Low On-Resistance (0.65Ω max)**  
- **Fast Switching Speed**  
- **Avalanche Energy Specified**  
- **Improved dv/dt Capability**  
- **TO-220FP Package (Fully Insulated)**  

This information is based solely on the manufacturer's datasheet.

Application Scenarios & Design Considerations

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