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STGD5NB120SZ from ST,ST Microelectronics

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STGD5NB120SZ

Manufacturer: ST

N-CHANNEL 5A

Partnumber Manufacturer Quantity Availability
STGD5NB120SZ ST 20 In Stock

Description and Introduction

N-CHANNEL 5A The STGD5NB120SZ is a power MOSFET manufactured by STMicroelectronics. Here are its key specifications, descriptions, and features:

### **Specifications:**
- **Voltage Rating (VDSS):** 1200V  
- **Current Rating (ID):** 5A (continuous)  
- **RDS(on) (Drain-Source On-Resistance):** 3.5Ω (max) at VGS = 10V  
- **Gate-Source Voltage (VGS):** ±30V  
- **Power Dissipation (PD):** 50W  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** TO-252 (DPAK)  

### **Description:**
The STGD5NB120SZ is a high-voltage N-channel MOSFET designed for switching applications. It is optimized for high efficiency and fast switching performance in power conversion circuits.

### **Features:**
- **High Voltage Capability:** 1200V breakdown voltage for robust performance.  
- **Low Gate Charge:** Enhances switching efficiency.  
- **Fast Switching Speed:** Suitable for high-frequency applications.  
- **Avalanche Ruggedness:** Improved reliability under transient conditions.  
- **Low On-Resistance:** Reduces conduction losses.  

This MOSFET is commonly used in power supplies, motor control, and other high-voltage switching applications.

Application Scenarios & Design Considerations

N-CHANNEL 5A

Alternative Part Number

  • IRGB4062DPBF --: 1200V-class rugged IGBT in TO-220 with integrated fast body diode, similar switching and clamping behavior suitable for ignition and high-voltage switching applications.
  • FGD5N120 --: 1200V N-channel IGBT in TO-220 with comparable current rating and avalanche capability, a common drop-in for high-voltage ignition coil drivers.
  • IXGP5N120A --: 1200V IGBT in TO-220 with similar voltage and current class, offering robust avalanche energy handling for inductive load switching.

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