N-CHANNEL 500V The **STD6NK50ZT4** is an N-channel MOSFET manufactured by **STMicroelectronics**. Here are its specifications, descriptions, and features:
### **Specifications:**
- **Drain-Source Voltage (VDSS):** 500V
- **Continuous Drain Current (ID):** 4.2A (at 25°C)
- **Pulsed Drain Current (IDM):** 16A
- **Power Dissipation (PD):** 35W (at 25°C)
- **Gate-Source Voltage (VGS):** ±30V
- **On-Resistance (RDS(on)):** 1.5Ω (max) at VGS = 10V
- **Threshold Voltage (VGS(th)):** 3V (min), 5V (max)
- **Input Capacitance (Ciss):** 450pF (typ)
- **Output Capacitance (Coss):** 45pF (typ)
- **Reverse Transfer Capacitance (Crss):** 8pF (typ)
- **Turn-On Delay Time (td(on)):** 10ns (typ)
- **Turn-Off Delay Time (td(off)):** 35ns (typ)
- **Operating Junction Temperature (TJ):** -55°C to 150°C
### **Description:**
- The **STD6NK50ZT4** is a **high-voltage N-channel MOSFET** designed for switching applications.
- It is part of STMicroelectronics' **MDmesh™ Z** series, optimized for **low conduction losses** and **high switching performance**.
- The device is housed in a **TO-220** package, providing efficient thermal dissipation.
### **Features:**
- **Low gate charge** for improved switching efficiency.
- **Low on-resistance (RDS(on))** for reduced conduction losses.
- **Fast switching speed** for high-frequency applications.
- **Avalanche ruggedness** for enhanced reliability in harsh conditions.
- **100% avalanche tested** for robustness.
- **Suitable for** power supplies, motor control, lighting, and other high-voltage switching applications.
This information is based on STMicroelectronics' official datasheet for the **STD6NK50ZT4**.
