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STD1HNC60-1 from ST,ST Microelectronics

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STD1HNC60-1

Manufacturer: ST

N-CHANNEL 600V 4 OHM 2A DPAK/IPAK POWERMESH II MOSFET

Partnumber Manufacturer Quantity Availability
STD1HNC60-1,STD1HNC601 ST 100 In Stock

Description and Introduction

N-CHANNEL 600V 4 OHM 2A DPAK/IPAK POWERMESH II MOSFET The **STD1HNC60-1** is a **600V, 1A** high-voltage fast-switching diode manufactured by **STMicroelectronics**.  

### **Key Specifications:**  
- **Voltage Rating (VRRM):** 600V  
- **Average Forward Current (IF(AV)):** 1A  
- **Peak Forward Surge Current (IFSM):** 30A (non-repetitive)  
- **Forward Voltage Drop (VF):** ~1.7V (typical at 1A)  
- **Reverse Recovery Time (trr):** Fast recovery (typically in the nanosecond range)  
- **Operating Temperature Range:** -65°C to +175°C  
- **Package:** SOD-123FL (surface-mount)  

### **Features:**  
- **High-voltage capability** (600V)  
- **Fast switching performance**  
- **Low leakage current**  
- **AEC-Q101 qualified** (suitable for automotive applications)  
- **Halogen-free and RoHS compliant**  

### **Applications:**  
- Switching power supplies  
- Freewheeling diodes  
- High-frequency rectification  
- Automotive systems  

This diode is designed for efficiency and reliability in high-voltage, fast-switching environments.

Application Scenarios & Design Considerations

N-CHANNEL 600V 4 OHM 2A DPAK/IPAK POWERMESH II MOSFET

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