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STB75NF20 from ST,ST Microelectronics

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15.625ms

STB75NF20

Manufacturer: ST

N-channel 200 V, 0.028 Ohm typ., 75 A STripFET(TM) Power MOSFET in D2PAK package

Partnumber Manufacturer Quantity Availability
STB75NF20 ST 1000 In Stock

Description and Introduction

N-channel 200 V, 0.028 Ohm typ., 75 A STripFET(TM) Power MOSFET in D2PAK package The STB75NF20 is an N-channel Power MOSFET manufactured by STMicroelectronics. Below are its key specifications, descriptions, and features:

### **Specifications:**  
- **Drain-Source Voltage (VDS):** 200V  
- **Continuous Drain Current (ID):** 75A  
- **Pulsed Drain Current (IDM):** 300A  
- **Power Dissipation (PD):** 300W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.022Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Input Capacitance (Ciss):** 3500pF (typ)  
- **Output Capacitance (Coss):** 700pF (typ)  
- **Reverse Transfer Capacitance (Crss):** 100pF (typ)  
- **Turn-On Delay Time (td(on)):** 12ns (typ)  
- **Turn-Off Delay Time (td(off)):** 45ns (typ)  
- **Operating Temperature Range:** -55°C to 175°C  

### **Description:**  
The STB75NF20 is a high-voltage, high-current MOSFET designed for power switching applications. It features low on-resistance and fast switching performance, making it suitable for high-efficiency power conversion.  

### **Features:**  
- **Low On-Resistance:** Minimizes conduction losses.  
- **High Current Capability:** Supports up to 75A continuous current.  
- **Fast Switching:** Optimized for high-frequency applications.  
- **Avalanche Energy Specified:** Ensures robustness in harsh conditions.  
- **100% Avalanche Tested:** Guarantees reliability under high-energy pulses.  
- **TO-220 Package:** Provides efficient thermal dissipation.  

This information is based on the manufacturer's datasheet. For detailed application guidelines, refer to the official STMicroelectronics documentation.

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