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IRFB4227PBF from IR,International Rectifier

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IRFB4227PBF

Manufacturer: IR

200V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-220AB package

Partnumber Manufacturer Quantity Availability
IRFB4227PBF IR 100 In Stock

Description and Introduction

200V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-220AB package The IRFB4227PBF is a power MOSFET manufactured by International Rectifier (IR). Below are its key specifications, descriptions, and features:

### **Manufacturer:**  
International Rectifier (IR)  

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 200V  
- **Continuous Drain Current (ID):** 72A (at 25°C)  
- **Pulsed Drain Current (IDM):** 290A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 330W (at 25°C)  
- **On-Resistance (RDS(on)):** 5.6mΩ (max at VGS = 10V)  
- **Total Gate Charge (Qg):** 130nC (typical)  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Diode Forward Voltage (VSD):** 1.3V (max at ISD = 72A)  

### **Description:**  
The IRFB4227PBF is a high-performance N-channel power MOSFET designed for high-current, high-efficiency switching applications. It features low on-resistance and fast switching speeds, making it suitable for power supplies, motor control, and DC-DC converters.  

### **Features:**  
- Advanced HEXFET® technology for low conduction losses  
- Low gate charge for fast switching  
- High current handling capability  
- Avalanche energy rated for ruggedness  
- Lead-free and RoHS compliant  

This MOSFET is packaged in a TO-220AB through-hole package for easy mounting and thermal management.  

(End of factual information.)

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