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P80NF55-08 from ST,ST Microelectronics

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P80NF55-08

Manufacturer: ST

N-channel 55 V - 0.0065 Ω - 80 A - TO-220 - D2PAK - TO-247 STripFET? Power MOSFET

Partnumber Manufacturer Quantity Availability
P80NF55-08,P80NF5508 ST 51000 In Stock

Description and Introduction

N-channel 55 V - 0.0065 Ω - 80 A - TO-220 - D2PAK - TO-247 STripFET? Power MOSFET **Introduction to the P80NF55-08 Power MOSFET by ST**  

The P80NF55-08 is a high-performance N-channel power MOSFET designed by STMicroelectronics, offering efficient power management for a wide range of applications. With a drain-source voltage (VDS) rating of 55V and a continuous drain current (ID) of 80A, this MOSFET is well-suited for high-current switching tasks in power supplies, motor control, and DC-DC converters.  

Featuring low on-resistance (RDS(on)) of just 8mΩ, the P80NF55-08 minimizes conduction losses, improving overall system efficiency. Its robust design ensures reliable operation under demanding conditions, making it a preferred choice for industrial and automotive applications. The device also includes a fast-switching capability, reducing switching losses in high-frequency circuits.  

Encased in a TO-220 package, the P80NF55-08 provides excellent thermal performance, allowing for effective heat dissipation. Its rugged construction and high avalanche energy rating enhance durability in harsh environments.  

Engineers and designers favor this MOSFET for its balance of performance, efficiency, and reliability, making it a versatile solution for modern power electronics. Whether used in battery management systems, inverters, or load switches, the P80NF55-08 delivers consistent performance under high-power conditions.

Application Scenarios & Design Considerations

N-channel 55 V - 0.0065 Ω - 80 A - TO-220 - D2PAK - TO-247 STripFET? Power MOSFET

Alternative Part Number

  • IRF3205 --: N-channel 55V MOSFET with very low RDS(on) (~8 mOhm) and high current capability, a widely used drop-in class equivalent to the P80NF55-08 in switching and power applications.
  • IPP80N06S2-08 --: N-channel MOSFET with 60V rating and ~8 mOhm RDS(on) in TO-220, matching the low on-resistance and current class of the original device.
  • FDP8870 --: N-channel 60V logic-level MOSFET with low RDS(on) and high current rating in TO-220, suitable as a functional replacement for the P80NF55-08.

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