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PSMN057-200B from PHILIPS

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PSMN057-200B

Manufacturer: PHILIPS, NXP/PH, NXP

N-channel TrenchMOS(tm) transistor
Partnumber Manufacturer Quantity Availability
PSMN057-200B,PSMN057200B PHILIPS, NXP/PH, NXP 10954 In Stock

Description and Introduction

N-channel TrenchMOS(tm) transistor **Introduction to the PSMN057-200B Power MOSFET**  

The PSMN057-200B is a high-performance N-channel power MOSFET designed for efficient switching applications in power electronics. With a low on-resistance (RDS(on)) of just 5.7 mΩ at 10 V, this component minimizes conduction losses, making it ideal for high-current applications such as DC-DC converters, motor drives, and power management systems.  

Featuring a robust 200 V drain-source voltage rating, the PSMN057-200B ensures reliable operation in demanding environments. Its fast switching characteristics and low gate charge enhance efficiency, reducing power dissipation in high-frequency circuits. The device is housed in a TO-220 package, providing excellent thermal performance and ease of mounting.  

Engineers favor the PSMN057-200B for its balance of performance, durability, and cost-effectiveness. Whether used in industrial automation, renewable energy systems, or automotive electronics, this MOSFET delivers consistent performance under varying load conditions. Its design prioritizes both energy efficiency and thermal stability, making it a dependable choice for modern power applications.  

For designers seeking a high-efficiency switching solution, the PSMN057-200B offers a compelling combination of low resistance, high voltage tolerance, and reliable operation.

Application Scenarios & Design Considerations

N-channel TrenchMOS(tm) transistor

Alternative Part Number

  • IRF540N --: Widely available 100V N-channel MOSFET with similar RDS(on) class; good general-purpose substitute though voltage rating is lower, verify application margin.
  • STP75NF75 --: 75V N-channel power MOSFET with low on-resistance in TO-220, suitable for switching applications where 200V is not strictly required.
  • FQP50N06 --: 60V N-channel MOSFET with comparable current capability and low RDS(on), a common alternative for power switching circuits.
  • IRFB4227PBF --: 200V N-channel MOSFET in TO-220 with comparable on-resistance and current rating, widely available and a common drop-in for 200V switching applications.
  • STP75NF75 --: 75A 75V-class TO-220 MOSFET family often used as a substitute in similar power switching designs; verify voltage margin for 200V rails before use.
  • FDP047AN08A0 --: High-current TO-220 N-channel MOSFET with low RDS(on), suitable as an alternative in power switching circuits where thermal and voltage ratings are checked.
  • IRFB4227PBF --: 200V N-channel MOSFET in TO-220 with low RDS(on) and comparable current rating, a well-established drop-in for switching and power applications.
  • STP75NF75 --: 75A 75V N-channel MOSFET in TO-220; check voltage margin, but widely available and cost-effective for similar power switching designs.
  • FDP047AN08A0 --: 80V N-channel MOSFET in TO-220 with very low RDS(on) and high current capability, suitable when lower voltage rating is acceptable.

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