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PSMN016-100PS from NXP,NXP Semiconductors

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PSMN016-100PS

Manufacturer: NXP, NXP/PH

N-channel 100V 16 m鈩?standard level MOSFET in TO-220

Partnumber Manufacturer Quantity Availability
PSMN016-100PS,PSMN016100PS NXP, NXP/PH 10800 In Stock

Description and Introduction

N-channel 100V 16 m鈩?standard level MOSFET in TO-220 The **PSMN016-100PS** is a high-performance N-channel MOSFET designed for demanding power management applications. With a low on-resistance (RDS(on)) of just 1.6 mΩ and a robust 100V drain-source voltage rating, this component excels in efficiency and thermal performance, making it ideal for switching power supplies, motor control, and DC-DC converters.  

Built using advanced trench technology, the PSMN016-100PS minimizes conduction and switching losses, ensuring reliable operation in high-current environments. Its compact **TO-220** package provides excellent thermal dissipation, supporting sustained performance under heavy loads. Additionally, the MOSFET features a fast switching speed, enhancing its suitability for high-frequency applications.  

Key specifications include a continuous drain current of 240A (at 25°C) and a low gate charge, which contributes to reduced drive power requirements. The device also incorporates an avalanche-rated design, improving durability in transient voltage conditions.  

Engineers favor the PSMN016-100PS for its balance of efficiency, ruggedness, and cost-effectiveness, making it a preferred choice for industrial, automotive, and renewable energy systems. Its robust construction and reliable performance ensure long-term stability in challenging operational conditions.  

For detailed electrical characteristics and application guidelines, consult the manufacturer’s datasheet to ensure proper integration within circuit designs.

Application Scenarios & Design Considerations

N-channel 100V 16 m鈩?standard level MOSFET in TO-220

Alternative Part Number

  • IRFB4110PBF --: 100V N-channel MOSFET in TO-220 with low RDS(on) and comparable current rating, widely available and a common drop-in for 100V power switching.
  • STP75NF75 --: 75V N-channel MOSFET in TO-220 with high current capability; suitable when the 100V margin is not strictly required and offers similar switching performance.
  • FDP047AN08A0 --: 80V N-channel MOSFET in TO-220 with low on-resistance and good thermal performance, a practical alternative for similar power supply and motor drive applications.
  • IRFB4110PBF --: 100V N-channel MOSFET in TO-220 with very low RDS(on) around 4.5 mOhm, a strong drop-in upgrade for the PSMN016-100PS in power switching applications.
  • STP150N10F7 --: 100V N-channel power MOSFET in TO-220 rated about 110A with low on-resistance, suitable replacement for the original in motor drive and DC-DC circuits.
  • IPP041N10N3G --: 100V N-channel MOSFET in TO-220 with approximately 4.1 mOhm RDS(on) and high current capability, matching the voltage and package of the original part.

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