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PSMN015-100B from NXP/PH,NXP Semiconductors

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PSMN015-100B

Manufacturer: NXP/PH, PHILIPS, NXP

N-channel TrenchMOS SiliconMAX standard level FET
Partnumber Manufacturer Quantity Availability
PSMN015-100B,PSMN015100B NXP/PH, PHILIPS, NXP 15399 In Stock

Description and Introduction

N-channel TrenchMOS SiliconMAX standard level FET **Introduction to the PSMN015-100B Power MOSFET**  

The PSMN015-100B is a high-performance N-channel power MOSFET designed for efficient power management in demanding applications. With a low on-resistance (RDS(on)) of just 1.5 mΩ, this component minimizes conduction losses, making it ideal for high-current switching circuits. Its robust 100V drain-source voltage (VDS) rating ensures reliable operation in industrial, automotive, and power supply systems.  

Featuring a compact and thermally efficient package, the PSMN015-100B delivers excellent power dissipation while maintaining stability under high-load conditions. Its fast switching characteristics enhance performance in DC-DC converters, motor drives, and battery management systems. Additionally, the MOSFET’s low gate charge (Qg) reduces drive losses, improving overall energy efficiency.  

Engineers value the PSMN015-100B for its reliability and durability, supported by advanced silicon technology that ensures consistent operation across a wide temperature range. Whether used in high-frequency switching or load control applications, this MOSFET provides a balance of power handling, thermal performance, and cost-effectiveness.  

For designers seeking a high-efficiency power switching solution, the PSMN015-100B offers a compelling combination of low resistance, high voltage tolerance, and compact form factor, making it a versatile choice for modern electronic systems.

Application Scenarios & Design Considerations

N-channel TrenchMOS SiliconMAX standard level FET

Alternative Part Number

  • IRFB4110PBF --: 100V N-channel MOSFET in TO-220 with very low RDS(on) around 4.5 mOhm, a strong drop-in upgrade for the 15 mOhm PSMN015-100B in switching and power applications.
  • STP150N10F7 --: 100V N-channel power MOSFET in TO-220 with low on-resistance and high current capability, suitable replacement for the PSMN015-100B in motor drive and SMPS designs.
  • FDP047AN08A0 --: 80V N-channel MOSFET in TO-220 with low RDS(on) and high current rating, a practical alternative when slightly lower voltage rating is acceptable for the PSMN015-100B application.
  • IRFB4110PBF --: 100V N-channel MOSFET in TO-220 with low RDS(on) around 4.5 mOhm, a well-known drop-in class replacement for the PSMN015-100B in switching and power applications.
  • STP150N10F7 --: 100V N-channel power MOSFET in TO-220 with very low on-resistance and high current capability, suitable substitute for the original Philips part in motor and SMPS designs.
  • FDP047AN08A0 --: 80V/100V-class N-channel MOSFET in TO-220 with low RDS(on) and robust avalanche rating, a practical alternative when the exact Philips device is unavailable.
  • IRFB4110PBF --: 100V N-channel MOSFET in TO-220 with low RDS(on) around 4.5 mOhm, a strong drop-in upgrade for switching and power applications.
  • STP150N10F7 --: 100V N-channel power MOSFET in TO-220 with very low on-resistance, suitable replacement for high-current switching designs.
  • FDP047AN08A0 --: 80V N-channel MOSFET in TO-220 with low RDS(on); acceptable if the circuit has margin below 80V and needs a widely available alternative.

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