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PSMN009-100B from PH

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PSMN009-100B

Manufacturer: PH, PHILIPS, NXP/PH

N-channel TrenchMOS SiliconMAX standard level FET
Partnumber Manufacturer Quantity Availability
PSMN009-100B,PSMN009100B PH, PHILIPS, NXP/PH 10051 In Stock

Description and Introduction

N-channel TrenchMOS SiliconMAX standard level FET **Introduction to the PSMN009-100B Electronic Component**  

The PSMN009-100B is a high-performance N-channel MOSFET designed for efficient power management in modern electronic applications. With a low on-resistance (RDS(on)) and high current-handling capability, this component is well-suited for switching and amplification tasks in power supplies, motor control, and DC-DC converters.  

Key features of the PSMN009-100B include a 100V drain-source voltage rating and a continuous drain current of up to 100A, ensuring robust performance in demanding environments. Its advanced trench technology minimizes conduction losses, improving overall system efficiency. Additionally, the MOSFET offers fast switching speeds, making it ideal for high-frequency applications.  

The component is housed in a compact and thermally efficient package, enhancing heat dissipation and reliability. Its lead-free and RoHS-compliant construction aligns with environmental standards, making it a sustainable choice for modern designs.  

Engineers and designers favor the PSMN009-100B for its balance of power handling, efficiency, and durability, making it a versatile solution for industrial, automotive, and consumer electronics applications. Its dependable performance under varying load conditions ensures consistent operation in critical circuits.

Application Scenarios & Design Considerations

N-channel TrenchMOS SiliconMAX standard level FET

Alternative Part Number

  • IRFB4110PBF --: 100V N-channel MOSFET in TO-220 with very low RDS(on) (~4.5 mOhm), close electrical match to the PSMN009-100B and widely available.
  • STP150N10F7 --: 100V N-channel power MOSFET in TO-220 with low on-resistance (~5 mOhm) and high current rating, suitable drop-in replacement.
  • FDP047AN08A0 --: 80V-class N-channel MOSFET in TO-220 with low RDS(on) and high current capability; acceptable substitute where slightly lower VDS margin is tolerable.
  • IRFB4110PBF --: 100V N-channel MOSFET in TO-220 with very low on-resistance (~4.5 mOhm), a strong drop-in upgrade for the PSMN009-100B in switching and power applications.
  • STP150N10F7 --: 100V N-channel power MOSFET in TO-220 with low RDS(on) and high current capability, suitable replacement for the original Philips part in most circuits.
  • IPP041N10N3G --: 100V N-channel MOSFET in TO-220 (OptiMOS family) with comparable voltage rating and low on-resistance, offering good availability as an alternative.
  • IRFB4110PBF --: 100V N-channel MOSFET with very low RDS(on) (~4.5 mOhm) in TO-220, a strong drop-in upgrade for the PSMN009-100B in switching and power applications.
  • STP150N10F7 --: 100V N-channel power MOSFET in TO-220 with low on-resistance and high current capability, suitable replacement for the original NXP part.
  • IPP041N10N3G --: 100V N-channel MOSFET in TO-220 with low RDS(on) and good thermal performance, a feasible alternative when the original is unavailable.

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