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NDD01N60T4G from ON,ON Semiconductor

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NDD01N60T4G

Manufacturer: ON

N-Channel Power MOSFET 600 V, 8.5 ohm

Partnumber Manufacturer Quantity Availability
NDD01N60T4G ON 10000 In Stock

Description and Introduction

N-Channel Power MOSFET 600 V, 8.5 ohm # Introduction to the NDD01N60T4G Power MOSFET  

The NDD01N60T4G is a high-performance N-channel power MOSFET designed for efficient power management in a variety of applications. With a voltage rating of 600V and a continuous drain current of 1A, this component is well-suited for switching and amplification tasks in power supplies, motor control, and lighting systems.  

Featuring low gate charge and reduced on-resistance (RDS(on)), the NDD01N60T4G ensures minimal power loss and improved thermal performance. Its fast switching characteristics make it ideal for high-frequency operations, enhancing overall system efficiency. The device is housed in a TO-252 (DPAK) package, providing a compact footprint while maintaining robust thermal dissipation.  

Engineers and designers will appreciate the MOSFET's reliability and durability, supported by its avalanche energy rating and strong gate oxide integrity. Whether used in industrial, automotive, or consumer electronics, the NDD01N60T4G offers a dependable solution for power conversion and control applications.  

By balancing performance, efficiency, and cost-effectiveness, this MOSFET serves as a practical choice for modern electronic designs requiring high-voltage handling and low conduction losses.

Application Scenarios & Design Considerations

N-Channel Power MOSFET 600 V, 8.5 ohm

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