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KSH32C from FSC,Fairchild Semiconductor

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KSH32C

Manufacturer: FSC

PNP Epitaxial Silicon Transistor

Partnumber Manufacturer Quantity Availability
KSH32C FSC 4052 In Stock

Description and Introduction

PNP Epitaxial Silicon Transistor The part **KSH32C** is manufactured by **FSC** (Fairchild Semiconductor Corporation). Below are the factual details about its specifications, descriptions, and features:

### **Specifications:**
- **Manufacturer:** FSC (Fairchild Semiconductor Corporation)  
- **Part Type:** Schottky Diode  
- **Configuration:** Single Diode  
- **Voltage - DC Reverse (Vr) (Max):** 40V  
- **Current - Average Rectified (Io):** 3A  
- **Forward Voltage (Vf) (Max) @ If:** 0.5V @ 3A  
- **Reverse Recovery Time (trr):** < 10ns  
- **Operating Temperature Range:** -65°C to +125°C  

### **Descriptions:**
- The **KSH32C** is a **Schottky barrier diode** designed for high-efficiency rectification in power supply applications.  
- It is commonly used in **switching power supplies, DC-DC converters, and reverse polarity protection circuits**.  
- The diode provides **low forward voltage drop and fast switching characteristics**, making it suitable for high-frequency applications.  

### **Features:**
- **Low forward voltage drop** for reduced power loss.  
- **High current capability** (3A average rectified current).  
- **Fast switching speed** with minimal reverse recovery time.  
- **High-temperature operation** up to +125°C.  
- **Pb-free and RoHS compliant** for environmental safety.  

These details are based on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

PNP Epitaxial Silicon Transistor
Partnumber Manufacturer Quantity Availability
KSH32C FAIRCHIL 25200 In Stock

Description and Introduction

PNP Epitaxial Silicon Transistor The KSH32C is a silicon NPN transistor manufactured by FAIRCHILD. Below are its specifications, descriptions, and features based on available factual information:  

### **Specifications:**  
- **Type:** NPN Silicon Transistor  
- **Maximum Collector-Base Voltage (VCB):** 60V  
- **Maximum Collector-Emitter Voltage (VCE):** 50V  
- **Maximum Emitter-Base Voltage (VEB):** 5V  
- **Maximum Collector Current (IC):** 500mA  
- **Power Dissipation (PD):** 625mW  
- **DC Current Gain (hFE):** 40 to 320 (depending on operating conditions)  
- **Transition Frequency (fT):** 50MHz (typical)  
- **Operating Temperature Range:** -65°C to +150°C  

### **Descriptions:**  
- The KSH32C is designed for general-purpose amplification and switching applications.  
- It is housed in a TO-92 package, making it suitable for through-hole PCB mounting.  
- The transistor is optimized for low noise and high gain performance.  

### **Features:**  
- High current gain (hFE) range.  
- Low saturation voltage for efficient switching.  
- Suitable for audio amplification and signal processing.  
- Reliable performance in a wide temperature range.  

This information is sourced from FAIRCHILD's datasheet for the KSH32C transistor.

Application Scenarios & Design Considerations

PNP Epitaxial Silicon Transistor

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