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JANTX2N6768 from IR,International Rectifier

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JANTX2N6768

Manufacturer: IR

400V Single N-Channel Hi-Rel MOSFET in a TO-204AE package

Partnumber Manufacturer Quantity Availability
JANTX2N6768 IR 207 In Stock

Description and Introduction

400V Single N-Channel Hi-Rel MOSFET in a TO-204AE package The JANTX2N6768 is a high-reliability, military-grade N-channel JFET (Junction Field-Effect Transistor) manufactured by International Rectifier (IR). Below are the factual specifications, descriptions, and features from the available knowledge base:

### **Manufacturer:**  
- **International Rectifier (IR)**  

### **Specifications:**  
- **Type:** N-Channel JFET  
- **Maximum Drain-Source Voltage (VDS):** 40V  
- **Maximum Gate-Source Voltage (VGS):** 40V  
- **Maximum Drain Current (ID):** 30mA  
- **Maximum Power Dissipation (PD):** 350mW  
- **Operating Temperature Range:** -55°C to +125°C  
- **Low Noise:** Suitable for high-frequency and low-noise applications  
- **High Input Impedance:** Typical for JFET devices  

### **Descriptions:**  
- The JANTX2N6768 is a ruggedized, military-specification (JANTX) version of the standard 2N6768 JFET.  
- Designed for high-reliability applications in military, aerospace, and industrial environments.  
- Features hermetically sealed packaging for enhanced durability in harsh conditions.  

### **Features:**  
- **Hermetic Packaging:** Ensures long-term reliability in extreme environments.  
- **Low Leakage Current:** Provides stable performance in precision circuits.  
- **Radiation-Hardened (if applicable):** Some versions may meet radiation tolerance requirements.  
- **High Gain Bandwidth Product:** Suitable for RF and switching applications.  

This information is based on standard JANTX specifications and typical IR datasheet details. For exact performance characteristics, refer to the official datasheet.

Application Scenarios & Design Considerations

400V Single N-Channel Hi-Rel MOSFET in a TO-204AE package

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