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IXTP3N120 from IXYS

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IXTP3N120

Manufacturer: IXYS

High Voltage Power MOSFETs
Partnumber Manufacturer Quantity Availability
IXTP3N120 IXYS 500 In Stock

Description and Introduction

High Voltage Power MOSFETs The **IXTP3N120** is a high-voltage N-channel MOSFET manufactured by **IXYS**.  

### **Key Specifications:**  
- **Voltage Rating (VDSS):** 1200V  
- **Current Rating (ID):** 3A  
- **Power Dissipation (PD):** 75W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 4.5Ω (typical)  
- **Package:** TO-220 (isolated tab)  

### **Descriptions and Features:**  
- Designed for high-voltage switching applications.  
- Low gate charge for efficient switching performance.  
- Fast switching speed.  
- Isolated mounting tab for simplified heat sinking.  
- Suitable for power supplies, inverters, and motor control applications.  

This MOSFET is optimized for reliability and performance in demanding high-voltage circuits.

Application Scenarios & Design Considerations

High Voltage Power MOSFETs

Alternative Part Number

  • STP3N120 --: N-channel 1200V MOSFET in TO-220 with comparable voltage rating and current capability, suitable as a direct functional substitute.
  • IRFBC30 --: 600V-class high-voltage MOSFET in TO-220; usable in lower-voltage applications but verify 1200V margin before substitution.
  • FQP3N120 --: 1200V N-channel MOSFET in TO-220 package with similar RDS(on) and current rating, good drop-in candidate.

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