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IRLL2703 from IR,International Rectifier

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IRLL2703

Manufacturer: IR

30V Single N-Channel HEXFET Power MOSFET in a SOT-223 package

Partnumber Manufacturer Quantity Availability
IRLL2703 IR 32000 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a SOT-223 package The IRLL2703 is a power MOSFET manufactured by International Rectifier (IR). Below are the key specifications, descriptions, and features from the manufacturer's datasheet:

### **Manufacturer:**  
International Rectifier (IR)  

### **Key Specifications:**  
- **Drain-Source Voltage (VDSS):** 30V  
- **Continuous Drain Current (ID):** 3.4A (at 25°C)  
- **Pulsed Drain Current (IDM):** 13A  
- **Power Dissipation (PD):** 20W (at 25°C)  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.065Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 1.0V (min) to 2.0V (max)  

### **Descriptions:**  
- **Technology:** HEXFET® Power MOSFET  
- **Package:** TO-262 (D2PAK)  
- **Polarity:** N-Channel  
- **Application:** Designed for high-efficiency switching applications.  

### **Features:**  
- **Low On-Resistance:** Optimized for minimal conduction losses.  
- **Fast Switching:** Enhances performance in high-frequency applications.  
- **Avalanche Energy Rated:** Improved ruggedness under inductive loads.  
- **Logic-Level Gate Drive:** Can be driven by 5V logic circuits.  
- **Lead-Free & RoHS Compliant:** Meets environmental standards.  

This information is sourced from the official IR datasheet for the IRLL2703 MOSFET.

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