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IRFR430B from FAIRCHIL,Fairchild Semiconductor

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IRFR430B

Manufacturer: FAIRCHIL

500V N-Channel MOSFET

Partnumber Manufacturer Quantity Availability
IRFR430B FAIRCHIL 220 In Stock

Description and Introduction

500V N-Channel MOSFET The IRFR430B is a power MOSFET manufactured by Fairchild Semiconductor (now part of ON Semiconductor). Below are its key specifications, descriptions, and features:  

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 100V  
- **Continuous Drain Current (ID):** 5.3A  
- **Pulsed Drain Current (IDM):** 21A  
- **Power Dissipation (PD):** 38W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.065Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Input Capacitance (Ciss):** 590pF  
- **Output Capacitance (Coss):** 180pF  
- **Reverse Transfer Capacitance (Crss):** 50pF  
- **Turn-On Delay Time (td(on)):** 10ns  
- **Turn-Off Delay Time (td(off)):** 35ns  
- **Operating Temperature Range:** -55°C to +175°C  
- **Package:** TO-252 (DPAK)  

### **Descriptions:**  
- The IRFR430B is an N-channel power MOSFET designed for high-efficiency switching applications.  
- It is optimized for low on-resistance and fast switching performance.  
- Suitable for power management in DC-DC converters, motor control, and other high-current applications.  

### **Features:**  
- **Low On-Resistance:** Minimizes conduction losses.  
- **Fast Switching:** Enhances efficiency in high-frequency circuits.  
- **Avalanche Energy Specified:** Ensures robustness in rugged environments.  
- **Improved dv/dt Capability:** Reduces susceptibility to voltage spikes.  
- **Lead-Free & RoHS Compliant:** Meets environmental standards.  

This information is based solely on the manufacturer's datasheet.

Application Scenarios & Design Considerations

500V N-Channel MOSFET
Partnumber Manufacturer Quantity Availability
IRFR430B FAIRCHILD 2225 In Stock

Description and Introduction

500V N-Channel MOSFET The IRFR430B is a power MOSFET manufactured by Fairchild Semiconductor (now part of ON Semiconductor). Below are its key specifications, descriptions, and features:  

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 100V  
- **Continuous Drain Current (ID):** 5.3A  
- **Pulsed Drain Current (IDM):** 21A  
- **Power Dissipation (PD):** 42W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.055Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Input Capacitance (Ciss):** 520pF  
- **Output Capacitance (Coss):** 110pF  
- **Reverse Transfer Capacitance (Crss):** 30pF  
- **Turn-On Delay Time (td(on)):** 13ns  
- **Turn-Off Delay Time (td(off)):** 50ns  
- **Operating Temperature Range:** -55°C to +175°C  

### **Description:**  
The IRFR430B is an N-channel MOSFET designed for high-speed switching applications. It is commonly used in power supplies, motor control, and DC-DC converters due to its low on-resistance and fast switching characteristics.  

### **Features:**  
- **Fast Switching Speed**  
- **Low On-Resistance**  
- **High Current Handling Capability**  
- **Avalanche Energy Specified**  
- **Improved dv/dt Capability**  
- **TO-220AB Package**  

This MOSFET is suitable for applications requiring efficient power management and high reliability.

Application Scenarios & Design Considerations

500V N-Channel MOSFET

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