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IRFR210TRL from IR,International Rectifier

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IRFR210TRL

Manufacturer: IR

200V Single N-Channel HEXFET Power MOSFET in a D-Pak package

Partnumber Manufacturer Quantity Availability
IRFR210TRL IR 337 In Stock

Description and Introduction

200V Single N-Channel HEXFET Power MOSFET in a D-Pak package The IRFR210TRL is a power MOSFET manufactured by Infineon Technologies. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Manufacturer:** Infineon Technologies  
### **Part Number:** IRFR210TRL  

### **Key Specifications:**  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDS):** 100V  
- **Continuous Drain Current (ID):** 2.7A (at 25°C)  
- **Pulsed Drain Current (IDM):** 11A  
- **RDS(on) (Drain-Source On-Resistance):** 0.27Ω (max) at VGS = 10V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 38W (at 25°C)  
- **Operating Junction Temperature (TJ):** -55°C to +150°C  
- **Package:** TO-252 (DPAK)  

### **Descriptions & Features:**  
- **Fast Switching:** Optimized for high-speed switching applications.  
- **Low Gate Charge:** Enhances efficiency in switching circuits.  
- **Avalanche Energy Rated:** Provides ruggedness in inductive load applications.  
- **Logic Level Gate Drive:** Can be driven by low-voltage control signals (fully enhanced at 4.5V).  
- **Applications:** Used in power management, DC-DC converters, motor control, and other high-efficiency switching circuits.  

This information is based solely on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

200V Single N-Channel HEXFET Power MOSFET in a D-Pak package

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