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IRFR110TRPBF from IR,International Rectifier

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IRFR110TRPBF

Manufacturer: IR

Dynamic dV/dt Rating Repetitive Avalanche Rated

Partnumber Manufacturer Quantity Availability
IRFR110TRPBF IR 13470 In Stock

Description and Introduction

Dynamic dV/dt Rating Repetitive Avalanche Rated The IRFR110TRPBF is a power MOSFET manufactured by Infineon Technologies. Below are the factual details from Ic-phoenix technical data files:

### **Manufacturer:**  
Infineon Technologies  

### **Specifications:**  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDS):** 100V  
- **Continuous Drain Current (ID):** 30A  
- **Pulsed Drain Current (IDM):** 120A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 94W  
- **On-Resistance (RDS(on)):** 0.027Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Input Capacitance (Ciss):** 2200pF  
- **Output Capacitance (Coss):** 600pF  
- **Reverse Transfer Capacitance (Crss):** 120pF  
- **Operating Temperature Range:** -55°C to +175°C  

### **Package:**  
- **Type:** TO-252 (DPAK)  
- **Mounting:** Surface Mount  

### **Features:**  
- Low on-resistance for high efficiency  
- Fast switching performance  
- Improved dv/dt capability  
- Lead-free and RoHS compliant  

This information is based solely on the manufacturer's datasheet and technical specifications.

Application Scenarios & Design Considerations

Dynamic dV/dt Rating Repetitive Avalanche Rated
Partnumber Manufacturer Quantity Availability
IRFR110TRPBF VISHAY 8000 In Stock

Description and Introduction

Dynamic dV/dt Rating Repetitive Avalanche Rated The IRFR110TRPBF is a power MOSFET manufactured by Vishay. Below are its specifications, descriptions, and features based on factual information:

### **Specifications:**
- **Manufacturer:** Vishay  
- **Part Number:** IRFR110TRPBF  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 100V  
- **Continuous Drain Current (ID):** 8.7A  
- **Pulsed Drain Current (IDM):** 34A  
- **Power Dissipation (PD):** 42W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.27Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Input Capacitance (Ciss):** 240pF  
- **Output Capacitance (Coss):** 60pF  
- **Reverse Transfer Capacitance (Crss):** 25pF  
- **Operating Temperature Range:** -55°C to +175°C  
- **Package:** TO-252 (DPAK)  

### **Description:**  
The IRFR110TRPBF is an N-channel power MOSFET designed for high-efficiency switching applications. It features low on-resistance and fast switching performance, making it suitable for power management, motor control, and DC-DC converters.  

### **Features:**  
- **Low On-Resistance:** Minimizes conduction losses.  
- **Fast Switching:** Enhances efficiency in high-frequency applications.  
- **Avalanche Energy Rated:** Provides robustness in inductive load conditions.  
- **Lead-Free & RoHS Compliant:** Meets environmental standards.  
- **Surface-Mount Package (DPAK):** Optimized for automated assembly.  

This information is sourced from Vishay's official datasheet for the IRFR110TRPBF.

Application Scenarios & Design Considerations

Dynamic dV/dt Rating Repetitive Avalanche Rated

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