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IRFI520G from IR,International Rectifier

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IRFI520G

Manufacturer: IR

100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package

Partnumber Manufacturer Quantity Availability
IRFI520G IR 1600 In Stock

Description and Introduction

100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package The IRFI520G is a power MOSFET manufactured by International Rectifier (IR). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
- **International Rectifier (IR)**  

### **Specifications:**  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 100V  
- **Continuous Drain Current (ID):** 9.7A  
- **Pulsed Drain Current (IDM):** 39A  
- **Power Dissipation (PD):** 150W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.27Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2-4V  
- **Input Capacitance (Ciss):** 1300pF  
- **Output Capacitance (Coss):** 400pF  
- **Reverse Transfer Capacitance (Crss):** 100pF  
- **Turn-On Delay Time (td(on)):** 15ns  
- **Turn-Off Delay Time (td(off)):** 60ns  
- **Rise Time (tr):** 30ns  
- **Fall Time (tf):** 25ns  
- **Operating Temperature Range:** -55°C to +175°C  

### **Descriptions:**  
- The IRFI520G is a high-voltage, high-speed N-channel MOSFET designed for power switching applications.  
- It is optimized for low gate drive requirements and high-efficiency performance.  
- The device is housed in a TO-220AB package, making it suitable for various industrial and automotive applications.  

### **Features:**  
- **High Voltage Capability (100V)**  
- **Low On-Resistance (RDS(on))**  
- **Fast Switching Speed**  
- **Improved dv/dt Capability**  
- **Avalanche Energy Specified**  
- **Low Gate Charge**  
- **Fully Characterized for Linear Mode Operation**  

This information is based solely on the manufacturer's datasheet and technical documentation.

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