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IRFBC40STRL from IR,International Rectifier

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IRFBC40STRL

Manufacturer: IR

600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Partnumber Manufacturer Quantity Availability
IRFBC40STRL IR 3000 In Stock

Description and Introduction

600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package The IRFBC40STRL is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

### **Manufacturer:**  
Infineon Technologies  

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 600V  
- **Continuous Drain Current (ID):** 6.2A (at 25°C)  
- **Pulsed Drain Current (IDM):** 24A  
- **Gate-Source Voltage (VGS):** ±30V  
- **Power Dissipation (PD):** 150W (at 25°C)  
- **On-Resistance (RDS(on)):** 1.2Ω (max at VGS = 10V)  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Input Capacitance (Ciss):** 600pF (typical)  
- **Output Capacitance (Coss):** 110pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 20pF (typical)  
- **Turn-On Delay Time (td(on)):** 10ns (typical)  
- **Turn-Off Delay Time (td(off)):** 50ns (typical)  
- **Operating Junction Temperature (TJ):** -55°C to +150°C  

### **Description:**  
The IRFBC40STRL is a high-voltage N-channel MOSFET designed for efficient switching applications. It features fast switching speeds, low gate charge, and high ruggedness, making it suitable for power supplies, motor control, and other high-voltage applications.  

### **Features:**  
- **Fast Switching:** Optimized for high-speed switching performance.  
- **Low Gate Charge:** Reduces switching losses.  
- **Avalanche Energy Specified:** Ensures reliability under inductive load conditions.  
- **Low On-Resistance:** Enhances efficiency in power conversion.  
- **TO-220AB Package:** Provides good thermal performance and ease of mounting.  
- **Lead-Free & RoHS Compliant:** Environmentally friendly.  

This MOSFET is commonly used in power supplies, inverters, and motor control circuits.

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