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IRF9530NSTRL from IR,International Rectifier

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IRF9530NSTRL

Manufacturer: IR

-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package

Partnumber Manufacturer Quantity Availability
IRF9530NSTRL IR 47 In Stock

Description and Introduction

-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package The IRF9530NSTRL is a P-channel Power MOSFET manufactured by Infineon Technologies. Below are the key specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
Infineon Technologies  

### **Specifications:**  
- **Drain-Source Voltage (VDS):** -100V  
- **Continuous Drain Current (ID):** -12A (at 25°C)  
- **Pulsed Drain Current (IDM):** -48A  
- **Power Dissipation (PD):** 75W (at 25°C)  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.30Ω (max) at VGS = -10V  
- **Threshold Voltage (VGS(th)):** -2V to -4V  
- **Input Capacitance (Ciss):** 600pF (typical)  
- **Output Capacitance (Coss):** 150pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 50pF (typical)  
- **Turn-On Delay Time (td(on)):** 15ns (typical)  
- **Turn-Off Delay Time (td(off)):** 60ns (typical)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  

### **Description:**  
The IRF9530NSTRL is a P-channel MOSFET designed for high-efficiency switching applications. It features low on-resistance, fast switching speeds, and high power handling capability, making it suitable for power management, DC-DC converters, and motor control applications.  

### **Features:**  
- **Advanced Process Technology:** Provides low RDS(on) for reduced conduction losses.  
- **Fast Switching:** Optimized for high-speed switching applications.  
- **Avalanche Energy Specified:** Enhances reliability in rugged environments.  
- **Improved dv/dt Capability:** Reduces susceptibility to voltage spikes.  
- **Lead-Free & RoHS Compliant:** Meets environmental standards.  

This information is based solely on the manufacturer's datasheet and technical documentation.

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