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IRF7410 TR from IR,International Rectifier

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15.625ms

IRF7410 TR

Manufacturer: IR

-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package

Partnumber Manufacturer Quantity Availability
IRF7410 TR,IRF7410TR IR 15000 In Stock

Description and Introduction

-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package The IRF7410 is a power MOSFET manufactured by International Rectifier (IR). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Manufacturer:** International Rectifier (IR)  
### **Part Number:** IRF7410  

### **Specifications:**  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 100V  
- **Continuous Drain Current (ID):** 42A  
- **Pulsed Drain Current (IDM):** 160A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 200W  
- **On-Resistance (RDS(on)):** 0.023Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Input Capacitance (Ciss):** 2700pF  
- **Output Capacitance (Coss):** 600pF  
- **Reverse Transfer Capacitance (Crss):** 120pF  
- **Turn-On Delay Time (td(on)):** 15ns  
- **Rise Time (tr):** 45ns  
- **Turn-Off Delay Time (td(off)):** 60ns  
- **Fall Time (tf):** 30ns  

### **Description:**  
The IRF7410 is a high-performance N-Channel MOSFET designed for power switching applications. It features low on-resistance, fast switching speeds, and high current handling capability, making it suitable for motor control, power supplies, and DC-DC converters.  

### **Features:**  
- Low on-resistance (RDS(on)) for reduced conduction losses  
- Fast switching performance  
- High current capability  
- Avalanche energy specified  
- Improved dv/dt capability  
- 100% tested for RDS(on)  

This information is based on the manufacturer's datasheet and technical documentation.

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