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IRF630PBF from IR,International Rectifier

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IRF630PBF

Manufacturer: IR

HEXFET Power MOSFET ( VDSS = 200V , RDS(on) = 0.40Ω , ID = 9.0A )

Partnumber Manufacturer Quantity Availability
IRF630PBF IR 76 In Stock

Description and Introduction

HEXFET Power MOSFET ( VDSS = 200V , RDS(on) = 0.40Ω , ID = 9.0A ) The IRF630PBF is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

### **Manufacturer:**  
Infineon Technologies  

### **Part Number:**  
IRF630PBF  

### **Description:**  
The IRF630PBF is an N-channel power MOSFET designed for high-speed switching applications. It is commonly used in power supplies, motor control, and DC-DC converters.  

### **Key Features:**  
- **Voltage Rating (VDSS):** 200V  
- **Current Rating (ID):** 9.3A (continuous at 25°C)  
- **RDS(on) (Drain-Source On-Resistance):** 0.4Ω (max) at VGS = 10V  
- **Gate-Source Voltage (VGS):** ±20V (max)  
- **Power Dissipation (PD):** 75W (at 25°C)  
- **Fast Switching Speed**  
- **Avalanche Energy Rated**  
- **Low Gate Charge (Qg)**  
- **Low Thermal Resistance**  

### **Package:**  
TO-220AB (Through-Hole)  

### **Applications:**  
- Switching power supplies  
- Motor control  
- DC-DC converters  
- Inverters  
- General-purpose power switching  

This MOSFET is designed for efficient power management and high-speed performance in various electronic circuits.

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