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IRF453

N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 12A.

Partnumber Manufacturer Quantity Availability
IRF453 14 In Stock

Description and Introduction

N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 12A. The IRF453 is a power MOSFET manufactured by International Rectifier (now part of Infineon Technologies). Below are its key specifications, descriptions, and features:  

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 500V  
- **Continuous Drain Current (ID):** 13A  
- **Pulsed Drain Current (IDM):** 52A  
- **Power Dissipation (PD):** 150W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.5Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2-4V  
- **Input Capacitance (Ciss):** 1000pF (typical)  
- **Package:** TO-247  

### **Description:**  
The IRF453 is a high-voltage N-channel MOSFET designed for power switching applications. It is commonly used in inverters, motor control, and high-voltage power supplies.  

### **Features:**  
- **High Voltage Capability:** Supports up to 500V drain-source voltage.  
- **Low On-Resistance:** Minimizes conduction losses.  
- **Fast Switching:** Suitable for high-frequency applications.  
- **Avalanche Energy Rated:** Enhances ruggedness in inductive load switching.  
- **TO-247 Package:** Provides efficient thermal dissipation.  

This information is based on the manufacturer's datasheet and technical documentation.

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