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IRF3710STRRPBF from IR,International Rectifier

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IRF3710STRRPBF

Manufacturer: IR

100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Partnumber Manufacturer Quantity Availability
IRF3710STRRPBF IR 12000 In Stock

Description and Introduction

100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package The IRF3710STRRPBF is a power MOSFET manufactured by Infineon Technologies. Below are the key specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
Infineon Technologies  

### **Description:**  
The IRF3710STRRPBF is a **N-Channel Power MOSFET** designed for high-efficiency power switching applications. It is part of the HEXFET® family, offering low on-resistance and high-speed switching performance.  

### **Key Specifications:**  
- **Drain-Source Voltage (VDS):** 100V  
- **Continuous Drain Current (ID):** 57A (at 25°C)  
- **Pulsed Drain Current (IDM):** 230A  
- **Power Dissipation (PD):** 200W (at 25°C)  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 23mΩ (at VGS = 10V, ID = 28A)  
- **Input Capacitance (Ciss):** 3300pF  
- **Output Capacitance (Coss):** 600pF  
- **Reverse Transfer Capacitance (Crss):** 100pF  
- **Turn-On Delay Time (td(on)):** 13ns  
- **Rise Time (tr):** 60ns  
- **Turn-Off Delay Time (td(off)):** 44ns  
- **Fall Time (tf):** 30ns  

### **Features:**  
- **Low On-Resistance (RDS(on))** for reduced conduction losses  
- **Fast Switching Speed** for high-frequency applications  
- **Avalanche Energy Rated** for ruggedness in inductive load switching  
- **Fully Characterized for Linear Mode Operation**  
- **Lead-Free & RoHS Compliant**  

### **Package:**  
- **TO-263 (D2PAK)** surface-mount package  
- **3-pin configuration**  

This MOSFET is commonly used in **power supplies, motor control, DC-DC converters, and other high-current switching applications**.  

(End of factual information.)

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