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IRF3703PBF from IR,International Rectifier

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IRF3703PBF

Manufacturer: IR

30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

Partnumber Manufacturer Quantity Availability
IRF3703PBF IR 4925 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package The IRF3703PBF is a power MOSFET manufactured by Infineon Technologies. Below are the key specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Manufacturer:**  
Infineon Technologies  

### **Description:**  
The IRF3703PBF is an N-channel power MOSFET designed for high-efficiency switching applications. It features low on-resistance and fast switching performance, making it suitable for power management in various electronic systems.  

### **Key Specifications:**  
- **Drain-Source Voltage (VDS):** 30V  
- **Continuous Drain Current (ID):** 210A (at 25°C)  
- **Pulsed Drain Current (IDM):** 840A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 200W (at 25°C)  
- **On-Resistance (RDS(on)):** 1.8mΩ (max) at VGS = 10V  
- **Input Capacitance (Ciss):** 5400pF  
- **Output Capacitance (Coss):** 1800pF  
- **Reverse Transfer Capacitance (Crss):** 400pF  
- **Turn-On Delay Time (td(on)):** 13ns  
- **Turn-Off Delay Time (td(off)):** 40ns  
- **Operating Temperature Range:** -55°C to +175°C  

### **Features:**  
- Low on-resistance for reduced conduction losses  
- Fast switching speed  
- High current handling capability  
- Robust and reliable performance  
- Avalanche energy specified  
- Lead-free and RoHS compliant  

### **Package:**  
TO-220AB (Through-hole)  

This information is based on the manufacturer's datasheet and technical documentation.

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