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IRF2807PBF from IR,International Rectifier

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IRF2807PBF

Manufacturer: IR

75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

Partnumber Manufacturer Quantity Availability
IRF2807PBF IR 20000 In Stock

Description and Introduction

75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package The IRF2807PBF is a power MOSFET manufactured by Infineon Technologies. Below are the key specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
Infineon Technologies  

### **Part Number:**  
IRF2807PBF  

### **Description:**  
The IRF2807PBF is an N-channel power MOSFET designed for high-efficiency switching applications. It is part of Infineon's HEXFET® series, known for low on-resistance and fast switching performance.  

### **Key Specifications:**  
- **Drain-Source Voltage (VDS):** 75V  
- **Continuous Drain Current (ID):** 82A (at 25°C)  
- **Pulsed Drain Current (IDM):** 330A  
- **Power Dissipation (PD):** 230W (at 25°C)  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.0075Ω (max at VGS = 10V)  
- **Total Gate Charge (Qg):** 150nC (typical)  
- **Input Capacitance (Ciss):** 5400pF (typical)  
- **Output Capacitance (Coss):** 1900pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 250pF (typical)  
- **Turn-On Delay Time (td(on)):** 15ns (typical)  
- **Turn-Off Delay Time (td(off)):** 50ns (typical)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  

### **Features:**  
- **Low On-Resistance:** Minimizes conduction losses.  
- **Fast Switching:** Optimized for high-frequency applications.  
- **Avalanche Energy Rated:** Enhances ruggedness in inductive load switching.  
- **TO-220AB Package:** Industry-standard through-hole package for easy mounting.  
- **Fully Characterized Dynamic Parameters:** Ensures reliable performance in switching circuits.  

This information is based strictly on the manufacturer's datasheet and specifications.

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