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HN1J02FU from TOSHIBA

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HN1J02FU

Manufacturer: TOSHIBA

Field Effect Transistor Silicon P Channel Mos Type High Speed Switching Applications Analog Switch Applications

Partnumber Manufacturer Quantity Availability
HN1J02FU TOSHIBA 24000 In Stock

Description and Introduction

Field Effect Transistor Silicon P Channel Mos Type High Speed Switching Applications Analog Switch Applications The part HN1J02FU is manufactured by TOSHIBA. It is a power MOSFET with the following specifications:  

- **Type**: N-channel  
- **Drain-Source Voltage (VDSS)**: 60V  
- **Continuous Drain Current (ID)**: 30A  
- **Power Dissipation (PD)**: 2.5W  
- **Gate-Source Voltage (VGS)**: ±20V  
- **On-Resistance (RDS(on))**: 25mΩ (max) at VGS = 10V  
- **Package**: TO-220F  

This information is based on available datasheets for the HN1J02FU from TOSHIBA.

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