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HN1C05FE from TOSHIBA

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HN1C05FE

Manufacturer: TOSHIBA

Transistor for low frequency small-signal amplification 2 in 1

Partnumber Manufacturer Quantity Availability
HN1C05FE TOSHIBA 300 In Stock

Description and Introduction

Transistor for low frequency small-signal amplification 2 in 1 The part HN1C05FE is manufactured by Toshiba. It is a semiconductor device, specifically a high-speed switching diode.  

Key specifications:  
- **Type**: High-speed switching diode  
- **Maximum repetitive peak reverse voltage (VRRM)**: 50V  
- **Average rectified forward current (IO)**: 1A  
- **Forward voltage (VF)**: 1V (typical at 1A)  
- **Reverse recovery time (trr)**: 4ns (typical)  
- **Package**: SOD-323 (SC-76)  

This diode is commonly used in high-speed switching applications, rectification, and protection circuits.  

(Source: Toshiba Semiconductor datasheet for HN1C05FE)

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