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HFP830 from SEMIHOW

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HFP830

Manufacturer: SEMIHOW

N-Channel Enhancement Mode Field Effect Transistor
Partnumber Manufacturer Quantity Availability
HFP830 SEMIHOW 400 In Stock

Description and Introduction

N-Channel Enhancement Mode Field Effect Transistor The part HFP830 is manufactured by SEMIHOW. Here are the factual specifications from Ic-phoenix technical data files:

- **Package Type**: SOT-89  
- **Transistor Type**: PNP  
- **Maximum Collector-Base Voltage (VCB)**: -30V  
- **Maximum Collector-Emitter Voltage (VCE)**: -25V  
- **Maximum Emitter-Base Voltage (VEB)**: -5V  
- **Continuous Collector Current (IC)**: -2A  
- **Total Power Dissipation (Ptot)**: 1.5W  
- **Operating Junction Temperature (Tj)**: -55°C to +150°C  
- **Storage Temperature Range (Tstg)**: -55°C to +150°C  

These are the confirmed specifications for the HFP830 as provided by SEMIHOW.

Application Scenarios & Design Considerations

N-Channel Enhancement Mode Field Effect Transistor

Alternative Part Number

  • IRF830 --: Industry-standard 500V N-channel MOSFET in the same class as the HFP830, widely available and electrically compatible.
  • STP4N90K5 --: High-voltage N-channel MOSFET with comparable voltage and current ratings, suitable as a functional replacement.
  • FQP4N90C --: 900V N-channel MOSFET offering similar switching characteristics and a robust alternative for high-voltage applications.

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