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2SC9018 from HJ

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2SC9018

Manufacturer: HJ

AM/FM IF AMPLIFIER, LOCAL OSCILLATOR OF FM/VHF TUNER

Partnumber Manufacturer Quantity Availability
2SC9018 HJ 15000 In Stock

Description and Introduction

AM/FM IF AMPLIFIER, LOCAL OSCILLATOR OF FM/VHF TUNER The 2SC9018 is a high-frequency transistor manufactured by HJ. It is designed for use in RF amplification applications. Key specifications include:

- **Type:** NPN
- **Material:** Silicon (Si)
- **Collector-Base Voltage (VCBO):** 30V
- **Collector-Emitter Voltage (VCEO):** 15V
- **Emitter-Base Voltage (VEBO):** 3V
- **Collector Current (IC):** 50mA
- **Total Power Dissipation (PT):** 150mW
- **Transition Frequency (fT):** 600MHz
- **Noise Figure (NF):** 1.5dB (typical)
- **Gain-Bandwidth Product:** High
- **Package:** TO-92

These specifications make the 2SC9018 suitable for use in VHF and UHF amplification circuits.

Partnumber Manufacturer Quantity Availability
2SC9018 698 In Stock

Description and Introduction

AM/FM IF AMPLIFIER, LOCAL OSCILLATOR OF FM/VHF TUNER The 2SC9018 is a high-frequency transistor manufactured by Toshiba. Here are the key specifications:

- **Type**: NPN Silicon Epitaxial Planar Transistor
- **Usage**: High-frequency amplification
- **Collector-Base Voltage (VCBO)**: 30V
- **Collector-Emitter Voltage (VCEO)**: 20V
- **Emitter-Base Voltage (VEBO)**: 3V
- **Collector Current (IC)**: 50mA
- **Total Power Dissipation (PT)**: 150mW
- **Junction Temperature (Tj)**: 125°C
- **Transition Frequency (fT)**: 1.1GHz
- **Noise Figure (NF)**: 1.5dB (typical at 1GHz)
- **Gain Bandwidth Product (fT)**: 1.1GHz
- **Package**: TO-92

These specifications are typical for the 2SC9018 transistor and are subject to variations based on operating conditions and manufacturer tolerances.

Partnumber Manufacturer Quantity Availability
2SC9018 KEC 3600 In Stock

Description and Introduction

AM/FM IF AMPLIFIER, LOCAL OSCILLATOR OF FM/VHF TUNER The 2SC9018 is a general-purpose NPN transistor manufactured by KEC (Korea Electronics Company). Here are the key specifications:

- **Type**: NPN Bipolar Junction Transistor (BJT)
- **Package**: TO-92
- **Collector-Base Voltage (VCBO)**: 30V
- **Collector-Emitter Voltage (VCEO)**: 25V
- **Emitter-Base Voltage (VEBO)**: 5V
- **Collector Current (IC)**: 700mA
- **Power Dissipation (Ptot)**: 625mW
- **DC Current Gain (hFE)**: 120 to 400
- **Transition Frequency (fT)**: 150MHz
- **Operating Temperature Range**: -55°C to +150°C

These specifications are typical for general-purpose amplification and switching applications.

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