800V 20A Std. Recovery Diode in a TO-220AC Full-Pak (2-Pin)package# Technical Documentation: 20ETS08FP Schottky Diode
Manufacturer : International Rectifier (IR)
## 1. Application Scenarios
### Typical Use Cases
The 20ETS08FP is a dual center-tapped Schottky barrier rectifier specifically designed for high-frequency switching applications. Primary use cases include:
Power Supply Circuits
- Switch-mode power supply (SMPS) output rectification
- Freewheeling diodes in buck/boost converters
- OR-ing diodes in redundant power systems
- Synchronous rectifier replacements in low-voltage applications
Voltage Clamping and Protection
- Reverse polarity protection circuits
- Voltage spike suppression in inductive loads
- Snubber circuits for power transistors
### Industry Applications
Computing and Telecommunications
- Server power supplies and VRM modules
- Telecom rectifiers and DC-DC converters
- Network equipment power distribution
Automotive Electronics
- Automotive power converters (12V/24V systems)
- Electric vehicle charging systems
- LED lighting drivers and control modules
Industrial Systems
- Motor drive circuits and inverters
- Industrial power supplies
- Renewable energy systems (solar inverters)
### Practical Advantages and Limitations
Advantages:
- Low Forward Voltage Drop : Typically 0.55V at 10A, reducing power losses
- Fast Recovery Time : <35ns enables high-frequency operation up to 200kHz
- High Efficiency : Low switching losses improve overall system efficiency
- Thermal Performance : TO-220FP (fully packaged) provides excellent thermal characteristics
- Dual Common Cathode Configuration : Simplifies center-tapped transformer designs
Limitations:
- Voltage Rating : 80V maximum limits high-voltage applications
- Thermal Considerations : Requires proper heatsinking at high currents
- Cost : Higher cost compared to standard PN junction diodes
- Reverse Leakage : Higher than conventional diodes at elevated temperatures
## 2. Design Considerations
### Common Design Pitfalls and Solutions
Thermal Management Issues
- Pitfall : Inadequate heatsinking leading to thermal runaway
- Solution : Implement proper thermal calculations and use recommended heatsinks
- Implementation : Maintain junction temperature below 150°C with derating above 100°C
Voltage Spikes and Transients
- Pitfall : Voltage overshoot exceeding 80V rating during switching
- Solution : Implement snubber circuits and careful layout to minimize parasitic inductance
- Implementation : Use RC snubbers with values calculated for specific operating conditions
Current Sharing in Parallel Operation
- Pitfall : Unequal current distribution when paralleling devices
- Solution : Include ballast resistors or ensure tight thermal coupling
- Implementation : 0.1Ω current-sharing resistors for parallel configurations
### Compatibility Issues with Other Components
Gate Driver Compatibility
- Ensure gate drivers can handle the capacitive load of paralleled devices
- Verify compatibility with controller ICs supporting Schottky rectification
Controller IC Integration
- Compatible with most PWM controllers (UC384x, TL494, etc.)
- May require additional gate drive circuitry for optimal performance
Passive Component Selection
- Output capacitors must handle high-frequency ripple current
- Input filters should account for fast switching characteristics
### PCB Layout Recommendations
Power Stage Layout
- Keep diode connections as short as possible to minimize parasitic inductance
- Use wide copper traces for high-current paths (minimum 2mm width per amp)
- Implement ground planes for improved thermal dissipation and noise reduction
Thermal Management
- Provide adequate copper area for heatsinking (minimum 100mm² per device)
- Use thermal vias under the package to transfer heat to inner layers
- Maintain minimum 3mm clearance from other heat-generating components
EMI Considerations
- Place input
