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1N4448WS from RECTRON

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1N4448WS

Manufacturer: RECTRON

Switching Diodes

Partnumber Manufacturer Quantity Availability
1N4448WS RECTRON 9500 In Stock

Description and Introduction

Switching Diodes The 1N4448WS is a high-speed switching diode manufactured by RECTRON. Below are the factual specifications from Ic-phoenix technical data files:

- **Type**: High-speed switching diode
- **Package**: SOD-323 (Small Outline Diode)
- **Maximum Repetitive Reverse Voltage (V_RRM)**: 100V
- **Average Rectified Forward Current (I_F(AV))**: 150mA
- **Peak Forward Surge Current (I_FSM)**: 4A (non-repetitive)
- **Forward Voltage (V_F)**: 1V (typical) at 10mA
- **Reverse Recovery Time (t_rr)**: 4ns (typical)
- **Operating Junction Temperature (T_J)**: -65°C to +150°C
- **Storage Temperature Range (T_stg)**: -65°C to +150°C

These specifications are based on the manufacturer's datasheet for the 1N4448WS diode.

Partnumber Manufacturer Quantity Availability
1N4448WS 长电 18000 In Stock

Description and Introduction

Switching Diodes The 1N4448WS is a high-speed switching diode manufactured by 长电 (Changjiang Electronics). Key specifications include:

- **Type**: High-speed switching diode
- **Package**: SOD-323
- **Maximum Reverse Voltage (V_R)**: 100V
- **Average Rectified Forward Current (I_F)**: 150mA
- **Peak Forward Surge Current (I_FSM)**: 1A
- **Forward Voltage (V_F)**: 1V at 10mA
- **Reverse Recovery Time (t_rr)**: 4ns
- **Operating Temperature Range**: -55°C to +150°C

These specifications are typical for the 1N4448WS diode in the SOD-323 package.

Partnumber Manufacturer Quantity Availability
1N4448WS TAKCHEON 3000 In Stock

Description and Introduction

Switching Diodes The 1N4448WS is a high-speed switching diode manufactured by TAKCHEON. Below are the factual specifications from Ic-phoenix technical data files:

- **Type**: High-speed switching diode
- **Package**: SOD-323 (Small Outline Diode)
- **Maximum Reverse Voltage (V_R)**: 100V
- **Average Rectified Forward Current (I_F)**: 150mA
- **Peak Forward Surge Current (I_FSM)**: 4A (non-repetitive)
- **Forward Voltage (V_F)**: 1V (at 10mA)
- **Reverse Recovery Time (t_rr)**: 4ns (typical)
- **Operating Temperature Range**: -65°C to +150°C
- **Storage Temperature Range**: -65°C to +150°C
- **Junction Capacitance (C_j)**: 4pF (at 0V, 1MHz)
- **Material**: Silicon

These specifications are based on the manufacturer's datasheet and are subject to the operating conditions outlined therein.

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