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1N4007G from ON,ON Semiconductor

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1N4007G

Manufacturer: ON

1.0 AMP GLASS PASSIVATED RECTIFIERS

Partnumber Manufacturer Quantity Availability
1N4007G ON 55000 In Stock

Description and Introduction

1.0 AMP GLASS PASSIVATED RECTIFIERS The 1N4007G is a general-purpose rectifier diode manufactured by ON Semiconductor. Here are the key specifications:

- **Maximum Average Forward Current (IF(AV))**: 1 A
- **Peak Forward Surge Current (IFSM)**: 30 A (non-repetitive)
- **Maximum Reverse Voltage (VR)**: 1000 V
- **Forward Voltage Drop (VF)**: 1.1 V (typical at 1 A)
- **Reverse Current (IR)**: 5 µA (maximum at rated reverse voltage)
- **Operating Junction Temperature (TJ)**: -65°C to +175°C
- **Storage Temperature Range (TSTG)**: -65°C to +175°C
- **Package**: DO-41 (Axial Lead)

These specifications are based on the datasheet provided by ON Semiconductor for the 1N4007G diode.

Partnumber Manufacturer Quantity Availability
1N4007G GOODARK 3000 In Stock

Description and Introduction

1.0 AMP GLASS PASSIVATED RECTIFIERS The 1N4007G is a general-purpose rectifier diode manufactured by GOODARK. Here are its key specifications:

- **Maximum Average Forward Current (IF(AV))**: 1.0 A
- **Peak Forward Surge Current (IFSM)**: 30 A
- **Maximum Reverse Voltage (VR)**: 1000 V
- **Forward Voltage Drop (VF)**: 1.1 V (typical) at 1.0 A
- **Reverse Leakage Current (IR)**: 5 µA (maximum) at 1000 V
- **Operating Junction Temperature (TJ)**: -55°C to +150°C
- **Storage Temperature Range (TSTG)**: -55°C to +150°C
- **Package**: DO-41

These specifications are typical for the 1N4007G diode and are consistent with its use in general-purpose rectification applications.

Partnumber Manufacturer Quantity Availability
1N4007G 86667 In Stock

Description and Introduction

1.0 AMP GLASS PASSIVATED RECTIFIERS The 1N4007G is a general-purpose rectifier diode manufactured by various companies, including ON Semiconductor. Key specifications include:

- **Maximum Average Forward Current (IF(AV))**: 1 A
- **Peak Forward Surge Current (IFSM)**: 30 A (non-repetitive)
- **Maximum Reverse Voltage (VR)**: 1000 V
- **Forward Voltage Drop (VF)**: Typically 1.1 V at 1 A
- **Reverse Leakage Current (IR)**: 5 µA at rated reverse voltage
- **Operating Junction Temperature (TJ)**: -65°C to +175°C
- **Package**: DO-41 (axial lead)

These specifications are standard for the 1N4007G diode, commonly used in power supply rectification and other general-purpose applications. Always refer to the specific manufacturer's datasheet for precise details.

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