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1N4002 from MS

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1N4002

Manufacturer: MS

100 V, silicon rectifier diode

Partnumber Manufacturer Quantity Availability
1N4002 MS 438 In Stock

Description and Introduction

100 V, silicon rectifier diode The 1N4002 is a general-purpose rectifier diode commonly used in power supply applications. Here are the key manufacturer specifications for the 1N4002 diode:

- **Maximum Average Forward Current (IF(AV))**: 1.0 A
- **Peak Forward Surge Current (IFSM)**: 30 A (non-repetitive)
- **Maximum Reverse Voltage (VR)**: 100 V
- **Forward Voltage Drop (VF)**: Typically 1.1 V at 1.0 A
- **Reverse Leakage Current (IR)**: 5 µA (maximum at rated reverse voltage)
- **Operating Junction Temperature (TJ)**: -65°C to +175°C
- **Storage Temperature Range (TSTG)**: -65°C to +175°C
- **Package Type**: DO-41 (axial leaded package)

These specifications are based on standard datasheet information provided by manufacturers like Microsemi (MS) and other semiconductor companies. Always refer to the specific datasheet for precise details.

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