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15ETH03S from IR,International Rectifier

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15.625ms

15ETH03S

Manufacturer: IR

300V 15A Ultra-Fast Discrete Diode in a D2-Pak (UltraFast) package

Partnumber Manufacturer Quantity Availability
15ETH03S IR 146 In Stock

Description and Introduction

300V 15A Ultra-Fast Discrete Diode in a D2-Pak (UltraFast) package The part 15ETH03S is a high-power RF transistor manufactured by Integra Technologies, Inc. It is designed for use in industrial, scientific, and medical (ISM) applications, as well as broadcast and aerospace systems. The key IR (Infrared) specifications for the 15ETH03S include:

- **Frequency Range**: 1 MHz to 250 MHz
- **Output Power**: 300 W (typical) at 30 MHz
- **Gain**: 16 dB (typical) at 30 MHz
- **Efficiency**: 65% (typical) at 30 MHz
- **Voltage**: 50 V
- **Current**: 12 A (typical) at 300 W output power
- **Thermal Resistance**: 0.5 °C/W (junction to case)

These specifications are critical for ensuring the transistor's performance in high-power RF applications.

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