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13NM60N from ST,ST Microelectronics

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13NM60N

Manufacturer: ST

N-channel 600 V, 0.320 Ω, 10 A PowerFLAT? (8x8) HV MDmesh? II Power MOSFET

Partnumber Manufacturer Quantity Availability
13NM60N ST 2000 In Stock

Description and Introduction

N-channel 600 V, 0.320 Ω, 10 A PowerFLAT? (8x8) HV MDmesh? II Power MOSFET The 13NM60N is a power MOSFET manufactured by STMicroelectronics. Below are the key specifications:

- **Type**: N-channel MOSFET
- **Technology**: MDmesh™ II
- **Drain-Source Voltage (VDS)**: 600 V
- **Gate-Source Voltage (VGS)**: ±30 V
- **Continuous Drain Current (ID)**: 13 A
- **Pulsed Drain Current (IDM)**: 52 A
- **Power Dissipation (PD)**: 190 W
- **RDS(on) (Max)**: 0.35 Ω at VGS = 10 V
- **RDS(on) (Max)**: 0.45 Ω at VGS = 4 V
- **Threshold Voltage (VGS(th))**: 3 V (typical)
- **Input Capacitance (Ciss)**: 1500 pF (typical)
- **Output Capacitance (Coss)**: 200 pF (typical)
- **Reverse Transfer Capacitance (Crss)**: 30 pF (typical)
- **Turn-On Delay Time (td(on))**: 10 ns (typical)
- **Turn-Off Delay Time (td(off))**: 50 ns (typical)
- **Operating Junction Temperature (TJ)**: -55°C to 150°C
- **Package**: TO-220

These specifications are based on the datasheet provided by STMicroelectronics.

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