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10ETF12S from IR,International Rectifier

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10ETF12S

Manufacturer: IR

1200V Fast Recovery Diode in a D2-Pak package

Partnumber Manufacturer Quantity Availability
10ETF12S IR 50 In Stock

Description and Introduction

1200V Fast Recovery Diode in a D2-Pak package The part 10ETF12S is a Schottky diode manufactured by Vishay. According to the specifications provided in Ic-phoenix technical data files, the key IR (Infrared) specifications for this part include:

- **Forward Voltage (VF):** Typically 0.55V at 6A.
- **Reverse Voltage (VR):** 120V.
- **Reverse Current (IR):** 500µA at 120V.
- **Junction Capacitance (Cj):** 300pF at 4V, 1MHz.
- **Operating Junction Temperature (Tj):** -65°C to +150°C.

These specifications are based on the datasheet provided by Vishay for the 10ETF12S Schottky diode.

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