1SV313Manufacturer: TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE VCO FOR UHF BAND RADIO | |||
Partnumber | Manufacturer | Quantity | Availability |
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1SV313 | TOSHIBA | 3000 | In Stock |
Description and Introduction
DIODE SILICON EPITAXIAL PLANAR TYPE VCO FOR UHF BAND RADIO The part 1SV313 is manufactured by TOSHIBA. It is a high-frequency, low-noise amplifier transistor designed for use in VHF band mobile radio applications. The transistor is housed in a TO-92MOD package and features a high current gain bandwidth product (fT) of 250 MHz. It has a collector current (Ic) of 50 mA and a collector-base voltage (Vcbo) of 30 V. The device is also characterized by low noise, making it suitable for applications requiring high sensitivity and low distortion.
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