1SV279Manufacturer: TOSHIBA Variable Capacitance Diode VCO for V/UHF Band Radio | |||
Partnumber | Manufacturer | Quantity | Availability |
---|---|---|---|
1SV279 | TOSHIBA | 817900 | In Stock |
Description and Introduction
Variable Capacitance Diode VCO for V/UHF Band Radio The part 1SV279 is a semiconductor device manufactured by TOSHIBA. It is a Silicon N-channel MOS FET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. Key specifications include:
- **Drain-Source Voltage (Vdss):** 60V These specifications are typical for high-speed switching and low-power applications. |
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