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1SV279 from TOSHIBA

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15.625ms

1SV279

Manufacturer: TOSHIBA

Variable Capacitance Diode VCO for V/UHF Band Radio

Partnumber Manufacturer Quantity Availability
1SV279 TOSHIBA 817900 In Stock

Description and Introduction

Variable Capacitance Diode VCO for V/UHF Band Radio The part 1SV279 is a semiconductor device manufactured by TOSHIBA. It is a Silicon N-channel MOS FET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. Key specifications include:

- **Drain-Source Voltage (Vdss):** 60V
- **Drain Current (Id):** 1.5A
- **Power Dissipation (Pd):** 1W
- **Gate-Source Voltage (Vgs):** ±20V
- **On-Resistance (Rds(on)):** 1.5Ω (max)
- **Input Capacitance (Ciss):** 50pF (typ)
- **Output Capacitance (Coss):** 15pF (typ)
- **Reverse Transfer Capacitance (Crss):** 5pF (typ)
- **Turn-On Delay Time (td(on)):** 10ns (typ)
- **Turn-Off Delay Time (td(off)):** 30ns (typ)

These specifications are typical for high-speed switching and low-power applications.

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