1SV277Manufacturer: TOSHIBA Variable Capacitance Diode VCO for UHF Band Radio | |||
Partnumber | Manufacturer | Quantity | Availability |
---|---|---|---|
1SV277 | TOSHIBA | 3000 | In Stock |
Description and Introduction
Variable Capacitance Diode VCO for UHF Band Radio The part 1SV277 is a semiconductor device manufactured by TOSHIBA. It is a Silicon N-channel MOS FET (Metal-Oxide-Semiconductor Field-Effect Transistor). The device is designed for high-speed switching applications and is commonly used in power management circuits. Key specifications include a drain-source voltage (VDS) of 30V, a continuous drain current (ID) of 3A, and a low on-resistance (RDS(on)) of 0.1Ω. The package type is typically a small surface-mount device (SMD) such as SOP-8.
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