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1SV252 from TOSHIBA

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1SV252

Manufacturer: TOSHIBA

Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications

Partnumber Manufacturer Quantity Availability
1SV252 TOSHIBA 8424 In Stock

Description and Introduction

Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications The part 1SV252 is a diode manufactured by TOSHIBA. It is a silicon epitaxial planar type diode, specifically designed for high-speed switching applications. The key specifications include:

- **Type**: Switching Diode
- **Material**: Silicon
- **Package**: SOD-323 (SC-76)
- **Maximum Repetitive Peak Reverse Voltage (VRRM)**: 30V
- **Maximum RMS Reverse Voltage (VRMS)**: 21V
- **Maximum DC Reverse Voltage (VR)**: 30V
- **Maximum Forward Voltage (VF)**: 1V at 10mA
- **Maximum Reverse Current (IR)**: 0.1µA at 25V
- **Maximum Forward Surge Current (IFSM)**: 1A (non-repetitive)
- **Operating Junction Temperature (Tj)**: -55°C to +150°C
- **Storage Temperature (Tstg)**: -55°C to +150°C

These specifications are typical for the 1SV252 diode and are subject to standard manufacturing variations.

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