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1SV103 from TOS,TOSHIBA

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1SV103

Manufacturer: TOS

VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE FM RADIO BAND TUNING APPLICATIONS

Partnumber Manufacturer Quantity Availability
1SV103 TOS 1200 In Stock

Description and Introduction

VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE FM RADIO BAND TUNING APPLICATIONS The part 1SV103 is a varactor diode manufactured by Toshiba. According to the TOS (Toshiba) specifications, it is designed for use in electronic tuning applications, such as in VCOs (Voltage Controlled Oscillators) and RF tuning circuits. Key specifications include:

- **Capacitance Range**: Typically around 2.5pF to 18pF, depending on the applied reverse voltage.
- **Voltage Range**: Operates with a reverse voltage typically ranging from 1V to 30V.
- **Q Factor**: High quality factor (Q) for efficient performance in RF applications.
- **Package**: Typically available in a small SOD-323 surface-mount package.
- **Operating Temperature Range**: Generally from -55°C to +125°C.

These specifications make it suitable for high-frequency applications where precise tuning is required.

Partnumber Manufacturer Quantity Availability
1SV103 Toshiba 10000 In Stock

Description and Introduction

VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE FM RADIO BAND TUNING APPLICATIONS The part 1SV103 is a semiconductor device manufactured by Toshiba. It is a high-speed switching diode designed for general-purpose applications. The key specifications include:

- **Type**: High-speed switching diode
- **Maximum repetitive peak reverse voltage (VRRM)**: 75V
- **Maximum average forward rectified current (IO)**: 150mA
- **Peak forward surge current (IFSM)**: 2A
- **Forward voltage (VF)**: 1V at 10mA
- **Reverse recovery time (trr)**: 4ns
- **Operating temperature range**: -55°C to +150°C
- **Package**: SOD-323 (Small Outline Diode)

These specifications are typical for general-purpose high-speed switching applications.

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