1SV103Manufacturer: TOS VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE FM RADIO BAND TUNING APPLICATIONS | |||
Partnumber | Manufacturer | Quantity | Availability |
---|---|---|---|
1SV103 | TOS | 1200 | In Stock |
Description and Introduction
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE FM RADIO BAND TUNING APPLICATIONS The part 1SV103 is a varactor diode manufactured by Toshiba. According to the TOS (Toshiba) specifications, it is designed for use in electronic tuning applications, such as in VCOs (Voltage Controlled Oscillators) and RF tuning circuits. Key specifications include:
- **Capacitance Range**: Typically around 2.5pF to 18pF, depending on the applied reverse voltage. These specifications make it suitable for high-frequency applications where precise tuning is required. |
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Partnumber | Manufacturer | Quantity | Availability |
1SV103 | Toshiba | 10000 | In Stock |
Description and Introduction
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE FM RADIO BAND TUNING APPLICATIONS The part 1SV103 is a semiconductor device manufactured by Toshiba. It is a high-speed switching diode designed for general-purpose applications. The key specifications include:
- **Type**: High-speed switching diode These specifications are typical for general-purpose high-speed switching applications. |
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