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1SS413 from TOSHIBA

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1SS413

Manufacturer: TOSHIBA

Small-signal Schottky barrier diode

Partnumber Manufacturer Quantity Availability
1SS413 TOSHIBA 586200 In Stock

Description and Introduction

Small-signal Schottky barrier diode The 1SS413 is a high-speed switching diode manufactured by Toshiba. Key specifications include:

- **Type**: Silicon Epitaxial Planar Diode
- **Maximum Repetitive Peak Reverse Voltage (VRRM)**: 30V
- **Maximum RMS Reverse Voltage (VR(RMS))**: 21V
- **Maximum DC Reverse Voltage (VR)**: 30V
- **Maximum Forward Voltage (VF)**: 1V at 10mA
- **Maximum Reverse Current (IR)**: 0.1µA at 25V
- **Maximum Forward Current (IF)**: 100mA
- **Maximum Surge Current (IFSM)**: 1A
- **Maximum Power Dissipation (PD)**: 150mW
- **Operating Temperature Range**: -55°C to +125°C
- **Storage Temperature Range**: -55°C to +150°C
- **Package**: SOD-323 (SC-76)

These specifications are typical for the 1SS413 diode and are subject to standard manufacturing tolerances.

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