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1SS392 from TOSHIBA

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1SS392

Manufacturer: TOSHIBA

Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application

Partnumber Manufacturer Quantity Availability
1SS392 TOSHIBA 75000 In Stock

Description and Introduction

Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application The 1SS392 is a high-speed switching diode manufactured by Toshiba. Here are the key specifications:

- **Type**: Silicon Epitaxial Planar Diode
- **Package**: SOD-323 (Mini-Mold)
- **Maximum Reverse Voltage (VR)**: 30 V
- **Maximum Forward Current (IF)**: 100 mA
- **Peak Forward Surge Current (IFSM)**: 1 A (pulse width = 1 ms)
- **Forward Voltage (VF)**: 1 V (at IF = 10 mA)
- **Reverse Current (IR)**: 0.1 µA (at VR = 30 V)
- **Junction Capacitance (Cj)**: 2 pF (at VR = 0 V, f = 1 MHz)
- **Reverse Recovery Time (trr)**: 4 ns (at IF = 10 mA, IR = 1 mA, RL = 50 Ω)
- **Operating Temperature Range**: -55°C to +125°C

These specifications are typical for the 1SS392 diode, which is commonly used in high-speed switching applications.

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