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1SS355TE-17 from ROHM

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15.625ms

1SS355TE-17

Manufacturer: ROHM

Sample Program (Remote Control Transmission/Reception)

Partnumber Manufacturer Quantity Availability
1SS355TE-17,1SS355TE17 ROHM 99000 In Stock

Description and Introduction

Sample Program (Remote Control Transmission/Reception) The part 1SS355TE-17 is a Schottky Barrier Diode manufactured by ROHM Semiconductor. Below are the key specifications:

- **Type**: Schottky Barrier Diode
- **Package**: SOD-323F
- **Maximum Reverse Voltage (VR)**: 40 V
- **Average Rectified Forward Current (IO)**: 0.2 A
- **Peak Forward Surge Current (IFSM)**: 1 A
- **Forward Voltage (VF)**: 0.5 V (typical) at 0.1 A
- **Reverse Current (IR)**: 0.1 µA (typical) at 40 V
- **Operating Temperature Range**: -55°C to +125°C
- **Storage Temperature Range**: -55°C to +150°C

These specifications are based on the typical characteristics of the 1SS355TE-17 diode as provided by ROHM.

Partnumber Manufacturer Quantity Availability
1SS355TE-17,1SS355TE17 6000 In Stock

Description and Introduction

Sample Program (Remote Control Transmission/Reception) The 1SS355TE-17 is a high-speed switching diode manufactured by Toshiba. Key specifications include:

- **Type**: Silicon Epitaxial Planar Diode
- **Package**: SOD-523 (SC-79)
- **Maximum Reverse Voltage (V_R)**: 70 V
- **Maximum Forward Current (I_F)**: 100 mA
- **Forward Voltage (V_F)**: 1 V (at 10 mA)
- **Reverse Recovery Time (t_rr)**: 4 ns (typical)
- **Operating Temperature Range**: -55°C to +150°C
- **Storage Temperature Range**: -55°C to +150°C

This diode is designed for high-speed switching applications and is commonly used in rectification, clamping, and protection circuits.

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