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1SS349 from TOSHIBA

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1SS349

Manufacturer: TOSHIBA

Diode Silicon Epitaxial Schottky Planar Type Ultra High Speed Switching Application

Partnumber Manufacturer Quantity Availability
1SS349 TOSHIBA 59503 In Stock

Description and Introduction

Diode Silicon Epitaxial Schottky Planar Type Ultra High Speed Switching Application The 1SS349 is a high-speed switching diode manufactured by Toshiba. Below are the key specifications:

- **Type**: Silicon Epitaxial Planar Diode
- **Package**: SOD-323 (SC-76)
- **Maximum Reverse Voltage (VR)**: 30 V
- **Maximum Forward Current (IF)**: 100 mA
- **Forward Voltage (VF)**: 1 V (typical) at 10 mA
- **Reverse Current (IR)**: 0.1 µA (maximum) at 25 V
- **Reverse Recovery Time (trr)**: 4 ns (typical)
- **Junction Capacitance (Cj)**: 2 pF (typical) at 0 V, 1 MHz
- **Operating Temperature Range**: -55°C to +150°C

These specifications are based on Toshiba's datasheet for the 1SS349 diode.

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